| PART |
Description |
Maker |
| 51238-1212 0512381212 |
CRC Shielded Rectangular I/O Receptacle Housing for Female Terminal, Signal, 12Circuits, Polarization Type A, Polarization Position B-2
|
Molex Electronics Ltd.
|
| 51238-1213 0512381213 |
CRC Shielded Rectangular I/O Receptacle Housing for Female Terminal, Signal, 12Circuits, Polarization Type B, Polarization Position B-3
|
Molex Electronics Ltd.
|
| 0512332015 51233-2015 |
CRC Shielded Rectangular I/O Receptacle Housing for Male Terminal, Signal, 20 Circuits, Polarization Type D, Polarization Position C-4
|
Molex Electronics Ltd.
|
| 51238-2012 |
CRC Shielded Rectangular I/O Receptacle Housing for Female Terminal, Signal, 20Circuits, Polarization Type A, Polarization Position B-2
|
Molex Electronics Ltd.
|
| 51238-2013 |
CRC Shielded Rectangular I/O Receptacle Housing for Female Terminal, Signal, 20Circuits, Polarization Type B, Polarization Position B-3
|
Molex Electronics Ltd.
|
| 51238-3014 |
CRC Shielded Rectangular I/O Receptacle Housing for Female Terminal, Signal, 30Circuits, Polarization Type C, Polarization Position D-4
|
Molex Electronics Ltd.
|
| 51239-3005 |
CRC?/a> Shielded Rectangular I/O Plug Housing, For Plug Assembly, Female TerminalSignal, 30 Circuits, Polarization Type D, Polarization Position B-3
|
Molex Electronics Ltd.
|
| 0512342003 51234-2003 |
CRC Shielded Rectangular I/O Plug Housing, For Plug Assembly, Male Terminal,Signal, 20 Circuits, Polarization Type B, Polarization Position B-3
|
Molex Electronics Ltd.
|
| K6R1008C1C- K6R1008C1C-C10 K6R1008C1C-C12 K6R1008C |
128K x 8 high speed static RAM, 5V operating, 12ns
128Kx8 Bit High-Speed CMOS Static RAM(5V Operating). Operated at Commercial and Industrial Temperature Ranges. 128Kx8位高速CMOS静态RAMV的工作）。在经营商业和工业温度范围
RES-140 0.0625W 1% THICK FILM
128K x 8 high speed static RAM, 5V operating, 15ns
128K x 8 high speed static RAM, 5V operating, 10ns
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
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